论文信息 - The variability due to random discrete dopant and grain boundary in 3D NAND unit cell

The variability due to random discrete dopant and grain boundary in 3D NAND unit cell

We investigate the electrical variability of polysilicon (poly-Si) channels with the single discrete dopant (SDD) and single grain boundary (SGB) for 3D NAND applications. A 3D simulation is used to investigate the effect of the SGB and the SDD on the threshold voltage (Vth) and subthreshold swing (S/S) variation where the SDD and SGB are randomly located in poly-Si channels. The SGB affects the entire channel potential and causes the Vth and S/S variations. On the other hand, the SDD can cause only small fluctuation in the S/S characteristics.

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