论文信息 - Unified solid-state-storage architecture with NAND flash memory and ReRAM that tolerates 32× higher BER for big-data applications

Unified solid-state-storage architecture with NAND flash memory and ReRAM that tolerates 32× higher BER for big-data applications

Unified solid-state storage (USSS) provides high error tolerance with four techniques: reverse-mirroring (RM), error-reduction synthesis (ERS), page-RAID, and error-masking (EM). The acceptable raw bit-error rate (ABER) of NAND flash memory is enhanced by 32×, or endurance or data-retention time effectively extends by 4.2 or 34×, respectively. ABER is defined to realize BER after ECC below 10-15.

Shuhei Tanakamaru | Ken Takeuchi | Masafumi Doi

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