论文信息 - A unified mobility model for device simulation—I. Model equations and concentration dependence

A unified mobility model for device simulation—I. Model equations and concentration dependence

Abstract The first physics-based analytical model is presented that unifies the descriptions of majority and minority carrier mobility and that includes screening of the impurities by charge carriers, electron-hole scattering, clustering of impurities and the full temperature dependence of both majority and minority carrier mobility. Using this model, excellent agreement is obtained with published experimental data on Si. The model is especially suited for device simulation purposes, because the carrier mobility is given as an analytical function of the donor, acceptor, electron and hole concentrations and of the temperature.

D.B.M. Klaassen | D. Klaassen

[1] G. Baccarani,et al. Electron mobility empirically related to the phosphorus concentration in silicon , 1975 .

[2] D.B.M. Klaassen,et al. A unified mobility model for device simulation—II. Temperature dependence of carrier mobility and lifetime , 1992 .

[3] P. Ostoja,et al. Relationship between resistivity and phosphorus concentration in silicon , 1974 .

[4] Herbert S. Bennett,et al. Hole and electron mobilities in heavily doped silicon: comparison of theory and experiment , 1983 .

[5] J. Slotboom,et al. Unified apparent bandgap narrowing in n- and p-type silicon , 1992 .

[6] J. Irvin,et al. Resistivity of bulk silicon and of diffused layers in silicon , 1962 .

[7] J. Krausse. Die abhängigkeit der trägerbeweglichkeit in silizium von der konzentration der freien ladungsträger—II , 1972 .

[8] Naoyuki Shigyo,et al. Minority carrier mobility model for device simulation. , 1990 .

[9] S. Li,et al. The dopant density and temperature dependence of electron mobility and resistivity in n-type silicon , 1977 .

[10] A. Mazzone,et al. Impurity effects on conduction in heavily doped n‐type silicon , 1977 .

[11] D. Silber,et al. Minority-carrier diffusion coefficients in highly doped silicon , 1979 .

[12] F. Dannhäuser,et al. Die abhängigkeit der trägerbeweglichkeit in silizium von der konzentration der freien ladungsträger—I☆ , 1972 .