Comparative Study of Experimental Techniques for Boron Profiling at Poly-Si/SiO2 Interface
暂无分享,去创建一个
J. Bude | P. Silverman | H. Luftman | N. Moriya | S. Downey | J. Bevk | M. Furtsch | K. Krisch
[1] R. Kistler,et al. Depth profiling of dopants in thin gate oxides in complementary metal– oxide–semiconductor structures by resonance ionization mass spectrometry , 1995 .
[2] W. Lin,et al. A simple method for extracting average doping concentration in the polysilicon and silicon surface layer near the oxide in polysilicon-gate MOS structures , 1994, IEEE Electron Device Letters.