论文信息 - Resonant tunneling via X‐point states in AlAs‐GaAs‐AlAs heterostructures

Resonant tunneling via X‐point states in AlAs‐GaAs‐AlAs heterostructures

We have observed resonant tunneling of electrons in AlAs‐GaAs‐AlAs heterostructures, via a quantum state localized in AlAs. The resonance manifests itself as a distinct feature in the current‐voltage characteristics, at 4 K. The confined energy state arises from a potential profile derived from the X point of the Brillouin zone, in which AlAs behaves as a quantum well and GaAs as a barrier.

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