Micro-Raman characterization of homo-epitaxial n doped GaN layers for vertical device applications
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Y. Cordier | D. Planson | C. Sonneville | K. Isoird | H. Maher | P. de Mierry | T. Ngo | É. Frayssinet | F. Morancho | J. Tasselli | L. Phung | Atse Julien Eric N’Dohi