An Artificial Optoelectronic Synapse Based on a Photoelectric Memcapacitor

DOI: 10.1002/aelm.201900858 away quickly when the light stimuli are removed.[3–5] In other words, traditional photodetectors can detect the images like a retina, but they lack the memory function owned by the visual cortex (see schematic illustration of human visual system in Figure 1a). To realize both detection and memory functions so as to better imitate the human visual system, researchers have attempted to integrate the photodetectors with the nonvolatile memory devices.[6–9] For example, a bioinspired visual system comprising an In2O3 nanowire photodetector connected in series with an Al2O3 memristor was fabricated recently, which could capture a butterflyshaped image and store it for more than 1 week.[9] In such integrated devices, however, the units responsible for detection, processing, and storage of optical information are physically separated, resulting in high power consumption for data transfer between different units (just as the Von Neumann bottleneck[10,11]). A simple yet effective humanoid optoelectronic device emerging recently is the artificial optoelectronic synapse based on the photoelectric memristor, which can co-locate the detection and memory functions in a single unit. As the name suggests, a photoelectric memristor can continuously change its resistance upon light stimuli, resembling the physiological The rapid development of artificial intelligence technology has led to the urge for artificial optoelectronic synapses with visual perception and memory capabilities. A new type of artificial optoelectronic synapse, namely a photo­ electric memcapacitor, is proposed and demonstrated. This photoelectric memcapacitor, with a planar Au/La1.875Sr0.125NiO4/Au metal–semiconductor– metal structure, displays a complementary optical and electrical modulation of capacitance, which can be attributed to the charge trapping/detrapping­ induced Schottky barrier variation. It further exhibits versatile synaptic functions, such as photonic potentiation/electric depression, paired­pulse facilitation, short­/long­term memory, and “learning­experience” behavior. Moreover, the photoplasticity of the memcapacitor can be modulated by varying the frequency of applied AC voltage, thus enabling self­adaptive optical signal detection and mimicry of interest­modulated human visual memory. Therefore, it represents a new paradigm for artificial optoelectronic synapses and opens up opportunities for developing low­power humanoid optoelectronic devices.

[1]  M. A. Señarís-Rodríguez,et al.  Dielectric response of the charge-ordered two-dimensional nickelate La1.5Sr0.5NiO4 , 2003, cond-mat/0307764.

[2]  Qing Wan,et al.  Artificial synapse network on inorganic proton conductor for neuromorphic systems. , 2014, Nature communications.

[3]  Di Chen,et al.  An Artificial Flexible Visual Memory System Based on an UV‐Motivated Memristor , 2018, Advanced materials.

[4]  Mary O'Neill,et al.  Reversible optical switching memristors with tunable STDP synaptic plasticity: a route to hierarchical control in artificial intelligent systems. , 2017, Nanoscale.

[5]  F. Selim,et al.  Persistent photoconductivity in strontium titanate. , 2013, Physical review letters.

[6]  Lin Gan,et al.  Photonic Potentiation and Electric Habituation in Ultrathin Memristive Synapses Based on Monolayer MoS2. , 2018, Small.

[7]  A. Nugroho,et al.  Colossal dielectric constant up to GHz at room temperature , 2008, 0811.1556.

[8]  Joondong Kim,et al.  All-Oxide-Based Highly Transparent Photonic Synapse for Neuromorphic Computing. , 2018, ACS applied materials & interfaces.

[9]  Luca Croin,et al.  Electrical transport and persistent photoconductivity in monolayer MoS2 phototransistors , 2017, Nanotechnology.

[10]  Pablo Stoliar,et al.  A Light‐Controlled Resistive Switching Memory , 2012, Advanced materials.

[11]  Juan Du,et al.  Photosensitive and Flexible Organic Field‐Effect Transistors Based on Interface Trapping Effect and Their Application in 2D Imaging Array , 2016, Advanced science.

[12]  Ming Liu,et al.  Light-Gated Memristor with Integrated Logic and Memory Functions. , 2017, ACS nano.

[13]  Jiang Yin,et al.  Silicon-Based Hybrid Optoelectronic Devices with Synaptic Plasticity and Stateful Photoresponse , 2018, Advanced Electronic Materials.

[14]  D. Ginger,et al.  Charge injection and transport in films of CdSe nanocrystals , 2000 .

[15]  Oxygen Point Defect Chemistry in Ruddlesden-Popper Oxides (La1-xSrx)2MO4±δ (M = Co, Ni, Cu). , 2016, The journal of physical chemistry letters.

[16]  R. Mole,et al.  Stability of charge-stripe ordered La2−xSrxNiO4+δ at one third doping , 2017, 1711.02891.

[17]  Z. Fan,et al.  Resistive switching induced by charge trapping/detrapping: a unified mechanism for colossal electroresistance in certain Nb:SrTiO3-based heterojunctions , 2017 .

[18]  Md Sakib Hasan,et al.  Dynamical nonlinear memory capacitance in biomimetic membranes , 2019, Nature Communications.

[19]  J. Wixted,et al.  On the Form of Forgetting , 1991 .

[20]  V. A. Dravin,et al.  Proton implantation effects on electrical and recombination properties of undoped ZnO , 2003 .

[21]  J. D. McGaugh Memory--a century of consolidation. , 2000, Science.

[22]  Zhiyong Fan,et al.  3D Arrays of 1024‐Pixel Image Sensors based on Lead Halide Perovskite Nanowires , 2016, Advanced materials.

[23]  Xubing Lu,et al.  Ferroelectric Diodes with Charge Injection and Trapping , 2017 .

[24]  F. Willig,et al.  Influence of trap filling on photocurrent transients in polycrystalline TiO2 , 1991 .

[25]  Young Min Song,et al.  Bioinspired Artificial Eyes: Optic Components, Digital Cameras, and Visual Prostheses , 2018 .

[26]  J. Krupka,et al.  Detrapping and retrapping of free carriers in nominally pure single crystal GaP, GaAs, and 4H-SiC semiconductors under light illumination at cryogenic temperatures , 2010, 1010.1610.

[27]  Li Jiang,et al.  Memristive Synapses with Photoelectric Plasticity Realized in ZnO1-x/AlOy Heterojunction. , 2018, ACS applied materials & interfaces.

[28]  R. Blondeau,et al.  Spectroscopy of the deep levels in tin-doped Ga-Al-As , 1980 .

[29]  S. Ramanathan,et al.  Thin film colossal dielectric constant oxide La2−xSrxNiO4: Synthesis, dielectric relaxation measurements, and electrode effects , 2011 .

[30]  M. Alexe,et al.  Persistent photoconductivity in strained epitaxial BiFeO3 thin films. , 2014, Nano letters.

[31]  Saibal Mukhopadhyay,et al.  3-D Stacked Image Sensor With Deep Neural Network Computation , 2018, IEEE Sensors Journal.

[32]  Mingsheng Xu,et al.  Electroluminescent synaptic devices with logic functions , 2018, Nano Energy.

[33]  Massimiliano Di Ventra,et al.  Memcapacitive neural networks , 2013, ArXiv.

[34]  Jianhai Zhang,et al.  Simulation of retinal ganglion cell response using fast independent component analysis , 2018, Cognitive Neurodynamics.

[35]  Y. Liu,et al.  Synaptic Learning and Memory Functions Achieved Using Oxygen Ion Migration/Diffusion in an Amorphous InGaZnO Memristor , 2012 .

[36]  Xing-jie Liang,et al.  Y2O3 Nanoparticles Caused Bone Tissue Damage by Breaking the Intracellular Phosphate Balance in Bone Marrow Stromal Cells. , 2018, ACS nano.

[37]  Jerzy Kanicki,et al.  Bias‐stress‐induced stretched‐exponential time dependence of charge injection and trapping in amorphous thin‐film transistors , 1993 .

[38]  Seong Ho Choi,et al.  Molecular tunnel junctions based on π-conjugated oligoacene thiols and dithiols between Ag, Au, and Pt contacts: effect of surface linking group and metal work function. , 2011, Journal of the American Chemical Society.

[39]  Pooi See Lee,et al.  A light-stimulated synaptic transistor with synaptic plasticity and memory functions based on InGaZnOx–Al2O3 thin film structure , 2016 .

[40]  Bin Yu,et al.  Solvent‐Based Soft‐Patterning of Graphene Lateral Heterostructures for Broadband High‐Speed Metal–Semiconductor–Metal Photodetectors , 2017 .

[41]  R. V. Ryzhuk,et al.  Deep centers and persistent photocapacitance in AlGaN/GaN high electron mobility transistor structures grown on Si substrates , 2013 .

[42]  T. Yoon,et al.  Analog reversible nonvolatile memcapacitance in metal-oxide-semiconductor memcapacitor with ITO/HfOx/Si structure , 2018, Applied Physics Letters.

[43]  N. B. Smirnov,et al.  Compensation and persistent photocapacitance in homoepitaxial Sn-doped β-Ga2O3 , 2018 .

[44]  W. Regehr,et al.  Short-term synaptic plasticity. , 2002, Annual review of physiology.

[45]  Yihong Wu,et al.  An Optoelectronic Resistive Switching Memory with Integrated Demodulating and Arithmetic Functions , 2015, Advanced materials.

[46]  Jiansheng Jie,et al.  Aligned Single‐Crystalline Perovskite Microwire Arrays for High‐Performance Flexible Image Sensors with Long‐Term Stability , 2016, Advanced materials.

[47]  S. Wu,et al.  Giant dielectric response in two-dimensional charge-ordered nickelate ceramics , 2008 .

[48]  U-In Chung,et al.  Persistent photoconductivity in Hf–In–Zn–O thin film transistors , 2010 .

[49]  W. Greenough,et al.  Experience and brain development. , 1987, Child development.

[50]  Kacper Pilarczyk,et al.  Synaptic Behavior in an Optoelectronic Device Based on Semiconductor‐Nanotube Hybrid , 2016 .

[51]  W. Kohn,et al.  Theory of Metal Surfaces: Work Function , 1971 .

[52]  Richard C. Atkinson,et al.  Human Memory: A Proposed System and its Control Processes , 1968, Psychology of Learning and Motivation.

[53]  S. Ramanathan,et al.  Synthesis and frequency-dependent dielectric properties of epitaxial La1.875Sr0.125NiO4 thin films , 2012 .

[54]  S. Pearton,et al.  Hole traps and persistent photocapacitance in proton irradiated β-Ga2O3 films doped with Si , 2018, APL Materials.

[55]  R. Atkinson,et al.  STORAGE AND RETRIEVAL PROCESSES IN LONG-TERM MEMORY 1 , 2005 .

[56]  C. Soci,et al.  ZnO nanowire UV photodetectors with high internal gain. , 2007, Nano letters.

[57]  S. Nau,et al.  Organic Non‐Volatile Resistive Photo‐Switches for Flexible Image Detector Arrays , 2015, Advanced materials.

[58]  Ho Won Jang,et al.  Inhibition of Ion Migration for Reliable Operation of Organolead Halide Perovskite‐Based Metal/Semiconductor/Metal Broadband Photodetectors , 2016 .

[59]  T. Hasegawa,et al.  Atomic Switch: Atom/Ion Movement Controlled Devices for Beyond Von‐Neumann Computers , 2012, Advanced materials.

[60]  Metal-ferroelectric-metal heterostructures with Schottky contacts. I. Influence of the ferroelectric properties , 2005, cond-mat/0508570.

[61]  John F. Donegan,et al.  Associative Enhancement of Time Correlated Response to Heterogeneous Stimuli in a Neuromorphic Nanowire Device , 2016 .

[62]  Wei Li,et al.  Broadband optoelectronic synaptic devices based on silicon nanocrystals for neuromorphic computing , 2018, Nano Energy.

[63]  Heung Cho Ko,et al.  A hemispherical electronic eye camera based on compressible silicon optoelectronics , 2008, Nature.

[64]  D. Jeong,et al.  Memristors for Energy‐Efficient New Computing Paradigms , 2016 .