High temperature processing of poly-SiC substrates from the vapor phase for wafer-bonding
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D. Chaussende | M. Mermoux | M. Pons | M. Anikin | R. Madar | E. Blanquet | G. Chichignoud | F. Letertre | E. Pernot | C. Moisson
[1] E. Jalaguier,et al. III–V layer transfer onto silicon and applications , 2005 .
[2] A. Powell,et al. Silicon Carbide Crystal and Substrate Technology: A Survey of Recent Advances , 2004 .
[3] Björn Magnusson,et al. SiC Crystal Growth by HTCVD , 2004 .
[4] D. Chaussende,et al. Continuous Feed Physical Vapor Transport Toward High Purity and Long Boule Growth of SiC , 2003 .
[5] J. Bluet,et al. SiC Power Devices on QUASIC and SiCOI Smart-Cut® Substrates: First Demonstrations , 2003 .
[6] A. Winnacker,et al. Aluminum p-type doping of silicon carbide crystals using a modified physical vapor transport growth method , 2002 .
[7] J. Bluet,et al. Modelling of SiC sublimation growth process: analyses of macrodefects formation , 1999 .
[8] J. Graebner,et al. Chemical vapor deposited diamond for thermal management , 1998 .