Deep Level Transient Spectroscopy for Semiconductor Surface and Interface Analysis

The purpose of the lecture is to describe the physical principles of the technique of Deep Level Transient Spectroscopy rather than to relate the countless applications of this technique /l/. Moreover, we will focus on the development of this method towards semiconductor surface or interface analysis. C.T. Sah and his coworkers were the first to study the capacitance transients of Schottky diodes in order to determine the concentration, the nature and the statistics of defects in semiconductor junctions /2/. D.V. Lang, by a proper signal processing of these transients /3/, allowed to extract spectroscopic informations from these relaxation signals. The method, called Deep Level Transient Spectroscopy (DLTS) led to a revolution in the physics of defects in semiconductors. More recently, DLTS was developed to study the insulator/semiconductor interface states /4,5/ and the metal/semiconductor near-interface states /6,7/.

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