Fully integrated nonlinear modeling and characterization system of microwave transistors with on-wafer pulsed measurements

A novel approach for nonlinear characterization and modeling of microwave transistors has been developed. The whole process is organized as a set of methods contained in the transistor database. This implies that characterization and modeling are performed in an integrated manner. I(V) and S-parameters are measured on wafer under pulsed conditions, suitable for MESFETs, HEMTs or HBTs as illustrated by the proposed models.<<ETX>>