A Review of Recent Developments in Focused Ion Beam Applications

Submicrometer focused ion beams have been used for selective ion implantation of GaAs and Si depletion-mode FETs and for the gate lithography for n-channel enhancement-mode Si MOSFETs. Maximum transconductance values for the latter devices with tox = 100 Å and Lg = 0.5 ¿m were 140 mS/mm. Short-channel effects were minimal in these devices.