A 2000 V-non-punch-through-IGBT with dynamical properties like a 1000 V-IGBT

A 2000-V IGBT (insulated-gate bipolar transistor) based on the simple concept of the non-punch-through IGBT is presented. The devices were processed on bulk silicon material without any lifetime-killing steps. On-state voltage and turn-off losses are nearly the same as for 1000-V IGBTs. The forward-bias safe-operating area of the devices is a rectangle up to 1800 V; no latchup occurs up to the short-circuit saturation current.<<ETX>>

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