A 0.8 μm BiCMOS Gate Driver for IGBT Power Switch

This paper discusses the design and implementation of a monolithic gate driver for an Insulated Gate Bipolar Transistor (IGBT). The objective is to implement a high voltage (25 V) monolithic gate driver with a novel protection circuit in a conventional low-voltage (5 V) high-density (0.8 μm) BiCMOS process. Extended drain MOS-FETs are used to implement the high-voltage capability in this design.

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