A compact transport and charge model for GaN-based high electron mobility transistors for RF applications
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[1] U. Mishra,et al. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs , 2001 .
[2] Debdeep Jena,et al. Effect of Optical Phonon Scattering on the Performance of GaN Transistors , 2010, IEEE Electron Device Letters.
[3] Xiang Gao,et al. InAlN/GaN HEMTs With AlGaN Back Barriers , 2011, IEEE Electron Device Letters.
[4] R. E. Thomas,et al. Carrier mobilities in silicon empirically related to doping and field , 1967 .
[5] J. J. Tietjen,et al. THE PREPARATION AND PROPERTIES OF VAPOR‐DEPOSITED SINGLE‐CRYSTAL‐LINE GaN , 1969 .
[6] G. T. Wright,et al. Threshold modelling of MOSFETs for CAD of CMOS-VLSI , 1985 .
[7] M. Shur,et al. Monte Carlo simulation of electron transport in gallium nitride , 1993 .
[8] H. Kondoh,et al. An Accurate FET Modelling from Measured S-Parameters , 1986, 1986 IEEE MTT-S International Microwave Symposium Digest.
[9] Jasprit Singh,et al. Design of high electron mobility devices with composite nitride channels , 2003 .
[10] Robert A. York,et al. A scalable EE_HEMT based large signal model for multi-finger AlGaN/GaN HEMTs for linear and non-linear circuit design , 2010 .
[11] S. Keller,et al. Influence of the dynamic access resistance in the g/sub m/ and f/sub T/ linearity of AlGaN/GaN HEMTs , 2005, IEEE Transactions on Electron Devices.
[12] A. Khakifirooz,et al. A Simple Semiempirical Short-Channel MOSFET Current–Voltage Model Continuous Across All Regions of Operation and Employing Only Physical Parameters , 2009, IEEE Transactions on Electron Devices.
[13] Y. Tsividis. Operation and modeling of the MOS transistor , 1987 .
[14] A. Schmitz,et al. Deeply-scaled self-aligned-gate GaN DH-HEMTs with ultrahigh cutoff frequency , 2011, 2011 International Electron Devices Meeting.
[15] K. Y. Tong,et al. A thermal model for static current characteristics of AlGaN∕GaN high electron mobility transistors including self-heating effect , 2006 .
[16] D. Antoniadis,et al. Physics-based GaN HEMT transport and charge model: Experimental verification and performance projection , 2012, 2012 International Electron Devices Meeting.
[17] Patrick Fay,et al. 245-GHz InAlN/GaN HEMTs With Oxygen Plasma Treatment , 2011, IEEE Electron Device Letters.
[18] T. Mimura,et al. A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions , 1980 .
[19] D. Antoniadis,et al. Extraction of virtual-source injection velocity in sub-100 nm III–V HFETs , 2009, 2009 IEEE International Electron Devices Meeting (IEDM).
[20] Walter Kruppa,et al. Trapping effects and microwave power performance in AlGaN/GaN HEMTs , 2001 .
[21] Isamu Akasaki,et al. Nitride semiconductors—impact on the future world , 2002 .
[22] Mark S. Lundstrom,et al. Essential physics of carrier transport in nanoscale MOSFETs , 2000, 2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502).
[23] R.W. Dutton,et al. A charge-oriented model for MOS transistor capacitances , 1978, IEEE Journal of Solid-State Circuits.
[24] L Dunleavy,et al. Modeling GaN: Powerful but Challenging , 2010, IEEE Microwave Magazine.
[25] U. Mishra,et al. AlGaN/GaN HEMTs-an overview of device operation and applications , 2002, Proc. IEEE.
[26] M. Asif Khan,et al. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction , 1993 .
[27] W. Curtice,et al. A Nonlinear GaAs FET Model for Use in the Design of Output Circuits for Power Amplifiers , 1985 .
[28] Arvydas Matulionis,et al. Ultrafast Removal of LO-Mode Heat From a GaN-Based Two-Dimensional Channel , 2010, Proceedings of the IEEE.
[29] Jin-Wook Chung,et al. Millimeter-wave GaN high electron mobility transistors and their integration with silicon electronics , 2011 .
[30] Hideki Hasegawa,et al. Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors , 2003 .
[31] G. Meneghesso,et al. Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs , 2006, IEEE Transactions on Electron Devices.
[32] R. van Langevelde,et al. Effect of gate-field dependent mobility degradation on distortion analysis in MOSFETs , 1997 .
[33] H. Zirath,et al. A new empirical nonlinear model for HEMT and MESFET devices , 1992 .
[34] Lan Wei,et al. Virtual-Source-Based Self-Consistent Current and Charge FET Models: From Ballistic to Drift-Diffusion Velocity-Saturation Operation , 2012, IEEE Transactions on Electron Devices.
[35] Michael S. Shur,et al. Induced strain mechanism of current collapse in AlGaN/GaN heterostructure field-effect transistors , 2001 .
[36] MILTON FENG,et al. Device technologies for RF front-end circuits in next-generation wireless communications , 2004, Proceedings of the IEEE.