论文信息 - High‐temperature lifetesting of Al/SiOx/p‐Si contacts for MIS solar cells

High‐temperature lifetesting of Al/SiOx/p‐Si contacts for MIS solar cells

High‐temperature lifetesting of Al/SiOx (10–15 A)/p‐Si contacts for high‐efficiency MIS solar cells is reported. Electrical degradation in the temperature range 270–400 °C was governed by an activation energy of 2.56±0.12 eV, indicating that the reduction of the thin oxide layer by Al was the mechanism responsible. Extrapolating to lower temperatures indicates that this process proceeds at a negligible rate below 200 °C.

M. Green | R. Godfrey

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