Minority Carrier Lifetime in Beryllium-Doped InAs/InAsSb Strained Layer Superlattices
暂无分享,去创建一个
G. Belenky | S. Svensson | H. Hier | Y. Lin | W. Sarney | D. Donetsky | D. Wang
[1] Eric C. Nallon,et al. Heterojunction-based GaSb/InAs strained-layer superlattice long wavelength infrared detectors , 2013 .
[2] G. Belenky,et al. Conduction- and Valence-Band Energies in Bulk InAs1−xSbx and Type II InAs1−xSbx/InAs Strained-Layer Superlattices , 2013, Journal of Electronic Materials.
[3] Hui Li,et al. Long-wave infrared nBn photodetectors based on InAs/InAsSb type-II superlattices , 2012 .
[4] T. F. Boggess,et al. Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice , 2012 .
[5] G. Belenky,et al. Carrier Lifetime Measurements in Long-Wave Infrared InAs/GaSb Superlattices Under Low Excitation Conditions , 2012, Journal of Electronic Materials.
[6] S. Krishna,et al. InAs/InAsSb strain balanced superlattices for optical detectors: Material properties and energy band simulations , 2012 .
[7] R. Dupuis,et al. Optical Properties of Strain‐balanced InAs/InAs1‐xSbx Type‐II Superlattices , 2011 .
[8] Amy W. K. Liu,et al. Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb , 2011 .
[9] G. Belenky,et al. Growth of type II strained layer superlattice, bulk InAs and GaSb materials for minority lifetime characterization , 2011 .
[10] David J. Smith,et al. Structural and optical characterization of type-II InAs/InAs1−xSbx superlattices grown by metalorganic chemical vapor deposition , 2011 .
[11] Sumith V. Bandara,et al. Doping dependence of minority carrier lifetime in long-wave Sb-based type II superlattice infrared detector materials , 2011 .
[12] Hongen Shen,et al. Direct minority carrier lifetime measurements and recombination mechanisms in long-wave infrared type II superlattices using time-resolved photoluminescence , 2010 .
[13] Gregory Belenky,et al. Minority carrier lifetime in type-2 InAs–GaSb strained-layer superlattices and bulk HgCdTe materials , 2010 .
[14] Gregory Belenky,et al. Carrier lifetime measurements in short-period InAs/GaSb strained-layer superlattice structures , 2009 .
[15] S. P. Watkins,et al. Strain balanced InAs/InAsSb superlattice structures with optical emission to 10 μm , 2009 .
[16] Y. Wang,et al. Growth of InAsSb/InAs MQWs on GaSb for mid-IR photodetector applications , 2009 .
[17] Manijeh Razeghi,et al. Beryllium compensation doping of InAs∕GaSb infrared superlattice photodiodes , 2007 .
[18] Shao-jie Wang,et al. Gallium antisite defect and residual acceptors in undoped GaSb , 2004 .
[19] H. Ehrenreich,et al. Long wavelength InAs/InGaSb infrared detectors: Optimization of carrier lifetimes , 1995 .
[20] G. C. Osbourn,et al. InAsSb strained‐layer superlattices for long wavelength detector applications , 1984 .
[21] L. Esaki,et al. A new semiconductor superlattice , 1977 .