Properties of HfO2 and HfO2: Y films grown by atomic layer deposition in an advanced monocyclopentadienyl-based process
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Mikko Ritala | Jun Lu | Kaupo Kukli | K. Kukli | M. Ritala | M. Leskelä | Jun Lu | A. Tamm | Jaakko Niinistö | Markku Leskelä | Aile Tamm | J. Niinistö
[1] W. K. Choi,et al. Study of rf‐sputtered yttrium oxide films on silicon by capacitance measurements , 1995 .
[2] G. Jursich,et al. Structural phase transformation of Y2O3 doped HfO2 films grown on Si using atomic layer deposition , 2009 .
[3] P. T. Lai,et al. Conduction mechanisms in MOS gate dielectric films , 2004, Microelectron. Reliab..
[4] G. Dalapati,et al. Electrical properties of high permittivity ZrO2 gate dielectrics on strained-Si , 2004 .
[5] S. Lhostis,et al. Addition of yttrium into HfO2 films: Microstructure and electrical properties , 2009 .
[6] A. Dimoulas,et al. Electrical properties of Y2O3 high-κ gate dielectric on Si(001): The influence of postmetallization annealing , 2003 .
[7] K. Kukli,et al. Atomic Layer Deposition of High-Permittivity Yttrium-Doped HfO2 Films , 2009 .