rf‐plasma deposited amorphous hydrogenated hard carbon thin films: Preparation, properties, and applications

The deposition of amorphous hydrogenated hard carbon (a–C:H) thin films from benzene vapor in a rf plasma is described. a–C:H was deposited on glass, quartz, Si, Ge, and GaAs. Negative self‐bias VB and gas pressure P are shown to be the two significant parameters for an accurate control of the deposition process. The dependence of growth rate and deposition temperature on VB and P was determined; this gives an empirical relation for the average energy E of the ions forming the thin films. Refractive index (1.85–2.20 in the IR), optical gap (0.8–1.8 eV) and density (1.5–1.8 g/cm3) of a–C:H was measured. The optical gap varies linearly with the content of bonded hydrogen in the films. The density of a–C:H is proportional to the average ion energy E. We demonstrate the application of a–C:H as antireflective coating on Ge for 10.6 μm (reflection <0.2% at 10.6 μm) and as terminating layer of an optical multilayer stack.

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