AlN/AlGaInN superlattice light-emitting diodes at 280 nm

Ultraviolet light-emitting diodes operating at 280 nm, grown by gas source molecular-beam epitaxy with ammonia, are described. The device is composed of n- and p-type superlattices of AlN(1.2 nm thick)/AlGaInN(0.5 nm thick) doped with Si and Mg, respectively. With these superlattices, and despite the high average Al content, we obtain hole concentrations of (0.7–1.1)×1018 cm−3, with the mobility of 3–4 cm2/V s and electron concentrations of 3×1019 cm−3, with the mobility of 10–20 cm2/V s, at room temperature. These carrier concentrations are sufficient to form effective p–n junctions needed in UV light sources.

[1]  Tsunemasa Taguchi,et al.  High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy , 2001 .

[2]  M. Shur,et al.  Properties of advanced semiconductor materials : GaN, AlN, InN, BN, SiC, SiGe , 2001 .

[3]  James S. Speck,et al.  The role of threading dislocations in the physical properties of GaN and its alloys , 1999 .

[4]  Henryk Temkin,et al.  AlGaInN-based ultraviolet light-emitting diodes grown on Si 111 , 2002 .

[5]  Increased Electrical Activity of Mg-Acceptors in AlxGa1-xN/GaN Superlattices , 1999 .

[6]  K. Kumakura,et al.  Enhanced Hole Generation in Mg-Doped AlGaN/GaN Superlattices Due to Piezoelectric Field , 1999 .

[7]  Naoki Kobayashi,et al.  Milliwatt operation of AlGaN-based single-quantum-well light emitting diode in the ultraviolet region , 2001 .

[8]  Naoki Kobayashi,et al.  Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN , 2001 .

[9]  J. Massies,et al.  Group-III nitride quantum heterostructures grown by molecular beam epitaxy , 2001 .

[10]  M. Shur,et al.  Ultraviolet Light-Emitting Diodes at 340 nm using Quaternary AlInGaN Multiple Quantum Wells , 2001 .

[11]  Umesh K. Mishra,et al.  ENHANCED MG DOPING EFFICIENCY IN AL0.2GA0.8N/GAN SUPERLATTICES , 1999 .

[12]  Henryk Temkin,et al.  Growth of AlGaN on Si(111) by gas source molecular beam epitaxy , 2000 .

[13]  G. Simin,et al.  Stripe Geometry Ultraviolet Light Emitting Diodes at 305 Nanometers Using Quaternary AlInGaN Multiple Quantum Wells , 2001 .

[14]  Henryk Temkin,et al.  Electron beam induced current measurements of minority carrier diffusion length in gallium nitride , 1996 .

[15]  H. Hirayama,et al.  Room-temperature operation at 333 nm of Al0.03Ga0.97N/Al0.25Ga0.75N quantum-well light-emitting diodes with Mg-doped superlattice layers , 2000 .