Diffusion of radiolytic molecular hydrogen as a mechanism for the post‐irradiation buildup of interface states in SiO2‐on‐Si structures

A review is made of recent literature dealing with radiation‐induced point defects distributed volumetrically in thermally grown SiO2‐on‐Si or superficially at the silicon interface, with particular emphasis on the results of electron‐spin‐resonance experimentation. The observed defect types and their anneal kinetics are then compared with recent advances in the understanding of similar species and processes in irradiated bulk fused silica. It is concluded that radiolytic molecular hydrogen is formed in thermally grown SiO2 layers, just as it is in bulk fused silica, and that the diffusion of this hydrogen determines the temperature and time dependencies of the post‐irradiation interface state buildups.

[1]  K. Jeppson,et al.  Negative bias stress of MOS devices at high electric fields and degradation of MNOS devices , 1977 .

[2]  Hisham Z. Massoud,et al.  Electron trapping in SiO2 at 295 and 77 °K , 1979 .

[3]  B. Henderson,et al.  Optically induced electron spin resonance and spin‐dependent recombination in Si/SiO2 , 1984 .

[4]  D. Griscom.  E' center in glassy SiO 2 : Microwave saturation properties and confirmation of the primary 29 Si hyperfine structure , 1979 .

[5]  J. Robertson,et al.  Theory of defects in vitreous silicon dioxide , 1983 .

[6]  Thermal Annealing of Radiation Induced Defects: A Diffusion-Limited Process? , 1983, IEEE Transactions on Nuclear Science.

[7]  D. R. Begeal,et al.  Diffusion and Permeation of He, Ne, Ar, Kr, and D2 through Silicon Oxide Thin Films , 1971 .

[8]  E. Friebele,et al.  Fundamental defect centers in glass: Si 29 hyperfine structure of the nonbridging oxygen hole center and the peroxy radical in a -Si O 2 , 1981 .

[9]  Bruce E. Deal,et al.  ESR centers, interface states, and oxide fixed charge in thermally oxidized silicon wafers , 1979 .

[10]  Patrick M. Lenahan,et al.  An electron spin resonance study of radiation‐induced electrically active paramagnetic centers at the Si/SiO2 interface , 1983 .

[11]  Patrick M. Lenahan,et al.  Defects and impurities in thermal oxides on silicon , 1982 .

[12]  A. Edwards,et al.  Theory of the peroxy-radical defect in a -Si O 2 , 1982 .

[13]  David L. Griscom,et al.  Thermal bleaching of x-ray-induced defect centers in high purity fused silica by diffusion of radiolytic molecular hydrogen , 1984 .

[14]  Donald R. Young,et al.  The effects of water on oxide and interface trapped charge generation in thermal SiO2 films , 1981 .

[15]  G. Walrafen,et al.  Structure and bonding in noncrystalline solids , 1986 .

[16]  Radiation-induced trapping centers in thin silicon dioxide films , 1980 .

[17]  A. Stesmans,et al.  Electron spin resonance study of defects in Si‐SiO2 structures induced by As+ ion implantation , 1984 .

[18]  A. G. Revesz,et al.  Defect Structure and Irradiation Behavior of Noncrystalline SiO2 , 1971 .

[19]  J. M. Andrews,et al.  Electrochemical Charging of Thermal SiO2 Films by Injected Electron Currents , 1971 .

[20]  P. S. Winokur,et al.  Interface-State Generation in Radiation-Hard Oxides , 1980, IEEE Transactions on Nuclear Science.

[21]  G. Dorda,et al.  Generation of interface states by hot hole injection in MOSFET's , 1982, IEEE Transactions on Electron Devices.

[22]  G. Sigel,et al.  Radiation-Induced Defect Centers in Thermally Grown Oxide Films , 1975, IEEE Transactions on Nuclear Science.

[23]  H. E. Boesch.  Interface-State Generation in Thick SiO2 Layers , 1982, IEEE Transactions on Nuclear Science.

[24]  D. Biegelsen,et al.  Characteristic electronic defects at the Si‐SiO2 interface , 1983 .

[25]  E. J. Friebele,et al.  Observation and analysis of the primary 29Si hyperfine structure of the E′ center in non-crystalline SiO2 , 1974 .

[26]  E. Friebele,et al.  Oxygen-associated trapped-hole centers in high-purity fused silicas , 1979 .

[27]  P. S. Winokur,et al.  Two‐stage process for buildup of radiation‐induced interface states , 1979 .

[28]  W. Carlos.  Effects of BIAS on radiation induced defects in mos oxides: An ESR study , 1984 .

[29]  A. Stesmans,et al.  X and K band ESR study of the Pb interface centres in thermally oxidized p-type (001)Si wafers at low temperatures and influence of medium-dose As+ ion implantation , 1984 .

[30]  P. Dressendorfer,et al.  Effect of bias on radiation‐induced paramagnetic defects at the silicon‐silicon dioxide interface , 1982 .

[31]  C. Dozier,et al.  Effect of Photon Energy on the Response of MOS Devices , 1981, IEEE Transactions on Nuclear Science.

[32]  E. J. Friebele,et al.  ESR studies of damage processes in X‐irradiated high purity a‐SiO2:OH and characterization of the formyl radical defect , 1983 .

[33]  D. Biegelsen,et al.  Electronic traps and Pb centers at the Si/SiO2 interface: Band‐gap energy distribution , 1984 .

[34]  E. Poindexter,et al.  Characterization of Si/SiO2 interface defects by electron spin resonance , 1983 .

[35]  E. Friebele,et al.  Fundamental defect centers in glass : The peroxy radical in irradiated high-purity fused silica , 1979 .

[36]  F. J. Norton,et al.  Permeation of Gaseous Oxygen through Vitreous Silica , 1961, Nature.

[37]  D. Griscom.  Characterization of three E'-center variants in X- and γ-irradiated high purity a-SiO2 , 1984 .

[38]  T. Waite,et al.  Theoretical Treatment of the Kinetics of Diffusion-Limited Reactions , 1957 .

[39]  N. Harrick,et al.  Hydrides and Hydroxyls in Thin Silicon Dioxide Films , 1971 .

[40]  R. Devine,et al.  Creation and annealing kinetics of magnetic oxygen vacancy centers in SiO2 , 1983 .

[41]  F. J. Grunthaner,et al.  Radiation-Induced Defects in SiO2 as Determined with XPS , 1982, IEEE Transactions on Nuclear Science.

[42]  Y. Nishi.  Electron Spin Resonance in SiO2 Grown on Silicon , 1966 .

[43]  C. Magee,et al.  Current-induced hydrogen migration and interface trap generation in aluminum-silicon dioxide-silicon capacitors , 1984 .

[44]  F. B. McLean.  A Framework for Understanding Radiation-Induced Interface States in SiO2 MOS Structures , 1980, IEEE Transactions on Nuclear Science.

[45]  C. Svensson,et al.  ESR studies of thermally oxidized silicon wafers , 1981 .

[46]  R. E. Mikawa,et al.  Structural damage at the Si/SiO2 interface resulting from electron injection in metal‐oxide‐semiconductor devices , 1985 .

[47]  Donald R. Young,et al.  Exciton or hydrogen diffusion in SiO2 , 1979 .

[48]  Max J. Schulz,et al.  Insulating Films on Semiconductors , 1981 .

[49]  T. Ma,et al.  Dependence of X-Ray Generation of Interface Traps on Gate Metal Induced Interfacial Stress in MOS Structures , 1984, IEEE Transactions on Nuclear Science.

[50]  R. Devine.  Mechanisms of damage recovery in ion implanted SiO2 , 1984 .

[51]  E. H. Nicollian,et al.  Mos (Metal Oxide Semiconductor) Physics and Technology , 1982 .

[52]  A. Revesz.  The Role of Hydrogen in SiO2 Films on Silicon , 1979 .

[53]  K. L. Brower.  29Si hyperfine structure of unpaired spins at the Si/SiO2 interface , 1983 .

[54]  D. Griscom.  E ′ center in glassy Si O 2 : O 17 , H 1 , and "very weak" Si 29 superhyperfine structure , 1980 .

[55]  S. Benson.  foundations of chemical kinetics , 1960 .

[56]  Patrick M. Lenahan,et al.  Hole traps and trivalent silicon centers in metal/oxide/silicon devices , 1984 .

[57]  W. Fowler,et al.  Electronic structure of E 1 ' centers in SiO 2 , 1975 .

[58]  Massimo V. Fischetti,et al.  The importance of the anode field in controlling the generation rate of the donor states at the Si–SiO2 interface , 1984 .

[59]  Yoshio Nishi,et al.  Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance I , 1971 .

[60]  J. E. Shelby,et al.  Molecular diffusion and solubility of hydrogen isotopes in vitreous silica , 1977 .

[61]  M. Peckerar,et al.  Radiation Effects Introduced by X-Ray Lithography in MOS Devices , 1982, IEEE Transactions on Nuclear Science.

[62]  Bruce E. Deal,et al.  Interface states and electron spin resonance centers in thermally oxidized (111) and (100) silicon wafers , 1981 .