论文信息 - Nature of the 0.111‐eV acceptor level in indium‐doped silicon - 字舞流文

Nature of the 0.111‐eV acceptor level in indium‐doped silicon

T. C. Mcgill | J. Baukus | S. Allen | H. Kimura | O. Marsh | R. Baron | M. Young | H. Winston