The relaxation rate of the magnetic moment of a shallow acceptor center as a function of impurity concentration in silicon
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D. G. Andrianov | D. Herlach | K. I. Gritsai | U. Zimmermann | J. Major | T. Mamedov | A. Stoikov | V. N. Gorelkin | O. Kormann
[1] A. Baturin,et al. Theoretical analysis of muon spin polarization behaviour in acceptor centres formed by μ− in Si , 2000 .
[2] A. Baturin,et al. Relaxation equation for muonium-like systems with electron spin more than one half , 2000 .
[3] D. Herlach,et al. Time‐differential radio‐frequency muon spin resonance (TD‐RFμSR) technique at a pulsed muon beam , 1997 .
[4] V. I. Fistul. Heavily Doped Semiconductors , 1995 .
[5] Suzuki,et al. Total nuclear capture rates for negative muons. , 1987, Physical review. C, Nuclear physics.
[6] P. Edwards,et al. Universality aspects of the metal-nonmetal transition in condensed media , 1978 .
[7] H. Neubrand. ESR From boron in silicon at zero and small external stress I. Line positions and line structure , 1978 .
[8] N. O. Lipari,et al. Spherical Model of Shallow Acceptor States in Semiconductors , 1973 .
[9] R. Enck,et al. Radiative Spectra from Shallow Donor-Acceptor Electron Transfer in Silicon , 1969 .
[10] Y. Yafet. Paramagnetic relaxation of shallow acceptor states in semiconductors , 1965 .
[11] C. Kittel. Introduction to solid state physics , 1954 .
[12] G. E. Pikus,et al. Symmetry and strain-induced effects in semiconductors , 1974 .
[13] G. W. Ludwig,et al. Electron Spin Resonance in Semiconductors , 1962 .