Non thermally-activated transients and buffer traps in GaN transistors with p-type gate: A new method for extracting the activation energy
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M. Meneghini | G. Meneghesso | G. Curatola | E. Zanoni | C. D. Santi | C. de Santi | A. Barbato | L. Sayadi | S. Sicre | G. Prechtl | A. Nardo | Luca Sayadi