Variability model for forming process in oxygen vacancy modulated high-κ based resistive switching memory devices
暂无分享,去创建一个
Daniel D. Frey | Nagarajan Raghavan | Michel Bosman | Kin Leong Pey | K. Pey | N. Raghavan | M. Bosman | D. Frey
[1] Luca Larcher,et al. High-kappa related reliability issues in advanced non-volatile memories , 2010, Microelectron. Reliab..
[2] Hiroshi Iwai,et al. Bilayer gate dielectric study by scanning tunneling microscopy , 2007 .
[3] Kenneth A. LaBel,et al. Radiation and Reliability Concerns for Modern Nonvolatile Memory Technology , 2011 .
[4] G. Bersuker,et al. Scanning Tunneling Microscopy Study of the Multi-Step Deposited and Annealed HfSiO x Gate Dielectric , 2011 .
[5] D. Gilmer,et al. Controlling uniformity of RRAM characteristics through the forming process , 2012, 2012 IEEE International Reliability Physics Symposium (IRPS).
[6] D. Kwong,et al. Oxide-based RRAM: Physical based retention projection , 2010, 2010 Proceedings of the European Solid State Device Research Conference.
[7] M. Lanza,et al. Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries , 2012 .
[8] Robert K. Henderson,et al. A 3×3, 5µm pitch, 3-transistor single photon avalanche diode array with integrated 11V bias generation in 90nm CMOS technology , 2010, 2010 International Electron Devices Meeting.
[9] V. Teslyuk,et al. IEEE International Reliability Physics Symposium , 2007 .
[10] X. Wu,et al. Role of grain boundary percolative defects and localized trap generation on the reliability statistics of high-κ gate dielectric stacks , 2012, 2012 IEEE International Reliability Physics Symposium (IRPS).
[11] L. Goux,et al. Understanding of the endurance failure in scaled HfO2-based 1T1R RRAM through vacancy mobility degradation , 2012, 2012 International Electron Devices Meeting.
[12] L. Larcher,et al. Metal oxide RRAM switching mechanism based on conductive filament microscopic properties , 2010, 2010 International Electron Devices Meeting.
[13] Shibing Long,et al. A Model for the Set Statistics of RRAM Inspired in the Percolation Model of Oxide Breakdown , 2013, IEEE Electron Device Letters.
[14] Alexander L. Shluger,et al. The interaction of oxygen vacancies with grain boundaries in monoclinic HfO2 , 2009 .
[15] Fu-Chien Chiu,et al. Reliability properties of metal-oxide-semiconductor capacitors using HfO2 high-κ dielectric , 2007 .
[16] Nagarajan Raghavan,et al. Study of preferential localized degradation and breakdown of HfO2/SiOx dielectric stacks at grain boundary sites of polycrystalline HfO2 dielectrics , 2013 .
[17] J. Yarmoff,et al. Sputtering-induced vacancy cluster formation on TiO2(110) , 2007 .
[18] L. Goux,et al. Stochastic variability of vacancy filament configuration in ultra-thin dielectric RRAM and its impact on OFF-state reliability , 2013, 2013 IEEE International Electron Devices Meeting.
[19] L. Larcher,et al. A physics-based model of the dielectric breakdown in HfO2 for statistical reliability prediction , 2011, 2011 International Reliability Physics Symposium.
[20] J. McPherson,et al. Thermochemical description of dielectric breakdown in high dielectric constant materials , 2003 .
[21] N. Singh,et al. Physical mechanisms of endurance degradation in TMO-RRAM , 2011, 2011 International Electron Devices Meeting.
[22] Nagarajan Raghavan,et al. Evidence for compliance controlled oxygen vacancy and metal filament based resistive switching mechanisms in RRAM , 2011 .
[23] Xiao Wei Sun,et al. A ZnTaOx Based Resistive Switching Random Access Memory , 2014 .
[24] J. McPherson,et al. Complementary model for intrinsic time-dependent dielectric breakdown in SiO2 dielectrics , 2000 .
[25] R. Degraeve,et al. Low Weibull slope of breakdown distributions in high-k layers , 2002, IEEE Electron Device Letters.
[26] Romuald B. Beck,et al. Reliability issues of double gate dielectric stacks based on hafnium dioxide (HfO2) layers for non-volatile semiconductor memory (NVSM) applications , 2012, Microelectron. Reliab..
[27] J. Stathis. Percolation models for gate oxide breakdown , 1999 .
[28] R. Degraeve,et al. RTN insight to filamentary instability and disturb immunity in ultra-low power switching HfOx and AlOx RRAM , 2013, 2013 Symposium on VLSI Technology.
[29] Patrick M. Lenahan,et al. The effect of interfacial layer properties on the performance of Hf-based gate stack devices , 2006 .