论文信息 - Time evolution of the Ga droplet size distribution during Langmuir evaporation of GaAs(001)

Time evolution of the Ga droplet size distribution during Langmuir evaporation of GaAs(001)

The time evolution of the Ga droplet size distribution is measured by in situ surface electron microscopy during Langmuir evaporation of GaAs. With a minimum of complexity, we are able to reproduce and explain the major features of the droplet size distribution by a simple Monte Carlo model. Guided by the experiment, the model includes droplet formation in response to coalescence events.

[1] Zhenyu Zhou,et al. Congruent evaporation temperature of GaAs(001) controlled by As flux , 2010 .

[2] Feldman,et al. Experimental study of self-similarity in the coalescence growth regime. , 1992, Physical review letters.

[3] C. T. Foxon,et al. The evaporation of GaAs under equilibrium and non-equilibrium conditions using a modulated beam technique , 1973 .

[4] J. Tersoff,et al. Running Droplets of Gallium from Evaporation of Gallium Arsenide , 2009, Science.

[5] Meakin,et al. Scaling of the droplet-size distribution in vapor-deposited thin films. , 1988, Physical review letters.

[6] J. Tersoff,et al. Decomposition controlled by surface morphology during langmuir evaporation of GaAs. , 2010, Physical review letters.

[7] J. Tsao. Chapter 5 – Coherency and Semi-coherency , 1993 .

[8] T. Mano,et al. Nanometer-scale GaAs ring structure grown by droplet epitaxy , 2005 .

[9] J. Tsao,et al. Materials Fundamentals of Molecular Beam Epitaxy , 1992 .

[10] C. Somaschini,et al. Fabrication of multiple concentric nanoring structures. , 2009, Nano letters.

[11] Kazuaki Sakoda,et al. Self-assembly of concentric quantum double rings. , 2005, Nano letters.

[12] M. Zinke–Allmang,et al. Microscopic study of cluster formation in the Ga on GaAs(001) system , 1993 .

[13] D. Chatain,et al. Congruent vaporization of GaAs(s) and stability of Ga(l) droplets at the GaAs(s) surface , 1995 .