Tunneling hot‐electron transfer amplifier: A hot‐electron GaAs device with current gain
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Marshall I. Nathan | M. Nathan | David C. Thomas | C. M. Knoedler | M. Heiblum | Moty Heiblum | C. Knoedler
[1] M. Nathan,et al. Energy band discontinuities in heterojunctions measured by internal photoemission , 1985 .
[2] R. Fischer,et al. Negative charge, barrier heights, and the conduction‐band discontinuity in AlxGa1−xAs capacitors , 1985 .
[3] Levi,et al. Hot-electron spectroscopy of GaAs. , 1985, Physical review letters.
[4] D. A. Kleinman,et al. Energy-gap discontinuities and effective masses for G a A s − Al x Ga 1 − x As quantum wells , 1984 .
[5] E. Mendez,et al. Growth by molecular beam epitaxy and characterization of high purity GaAs and AlGaAs , 1983 .
[6] M. Hollis,et al. Importance of electron scattering with coupled plasmon-optical phonon modes in GaAs planar-doped barrier transistors , 1983, IEEE Electron Device Letters.
[7] N. Watanabe,et al. Fully ion-implanted GaAs ICs using normally-off JFETs , 1981 .
[8] M. Heiblum. Tunneling hot electron transfer amplifiers (theta): Amplifiers operating up to the infrared , 1981 .
[9] J. Shannon. Hot-electron camel transistor , 1979 .
[10] C. Mead. Operation of Tunnel‐Emission Devices , 1961 .