A TCAD-based yield and reliability analysis for VCSELs

Yield enhancement and reliability improvement are main requirements in todays industrial VCSEL manufacturing. This requires a thorough understanding of process tolerances and the effects resulting from design variations. So far, this has been done by statistical analysis of experimental data. In this work, we use a state-of-the art technology computer aided design (TCAD) tool to analyze device reliability and yield for multiple VCSEL designs. The starting point is a physics-based simulation model that is calibrated to temperature-dependent static and dynamic measurements for a set of single- and multi-mode VCSELs lasing at 850 nm. Applying statistical variations that result from design modifications and process fluctuations, yield and reliability data are extracted by means of simulation. The yield will be derived by compliance to selected device specifications (such available single-mode power), and the device reliability is determined from an analysis of the internal device properties. As example, the oxide aperture and metal aperture design will be discussed, and a robust design will be presented.