Linear and quadratic electro-optic coefficients of self-organized In0.4Ga0.6As/GaAs quantum dots

The electro-optic properties of self-organized In0.4Ga0.6As/GaAs quantum dots have been studied experimentally. Single-mode ridge waveguide structures were grown by molecular beam epitaxy with self-organized In0.4Ga0.6As/GaAs quantum dots in the guiding region. The measured linear and quadratic electro-optic coefficients are 2.58×10−11 m/V and 6.25×10−17 m2/V2, respectively, which are much higher than those obtained for bulk GaAs or quantum well structures. The measured transmission characteristics indicate that low-voltage amplitude modulators can be realized with quantum dot active regions.

[1]  P. Cohen,et al.  Relaxation of strained InGaAs during molecular beam epitaxy , 1990 .

[2]  Masamichi Yamanishi,et al.  Field-induced modulations of refractive index and absorption coefficient in a GaAs/AlGaAs quantum well structure , 1986 .

[3]  Jamie D. Phillips,et al.  Room-temperature operation of In0.4Ga0.6As/GaAs self-organised quantum dot lasers , 1996 .

[4]  Ramu V. Ramaswamy,et al.  Analysis and design of high-speed high-efficiency GaAs-AlGaAs double-heterostructure waveguide phase modulator , 1991 .

[5]  P. Bhattacharya,et al.  Refractive index and electro‐optic effect in compressive and tensile strained quantum wells , 1991 .

[6]  David A. B. Miller,et al.  Theory of the linear and nonlinear optical properties of semiconductor microcrystallites. , 1987, Physical review. B, Condensed matter.

[7]  C. Weisbuch,et al.  Radiative recombination in GaAs‐AlxGa1−xAs quantum dots , 1992 .

[8]  John E. Bowers,et al.  Room temperature lasing from InGaAs quantum dots , 1996 .

[9]  K. K. Ko,et al.  Photoluminescence and electro‐optic properties of small (25–35 nm diameter) quantum boxes , 1993 .

[10]  K. Vahala,et al.  Vapor phase synthesis of crystalline nanometer‐scale GaAs clusters , 1992 .

[11]  Bryant.  Excitons in quantum boxes: Correlation effects and quantum confinement. , 1988, Physical review. B, Condensed matter.

[12]  Brandt,et al.  InAs quantum dots in a single-crystal GaAs matrix. , 1991, Physical review. B, Condensed matter.

[13]  C. Burrus,et al.  Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect , 1984 .

[14]  D. Rich,et al.  In-situ fabrication of three-dimensionally confined GaAs and InAs volumes via growth on non-planar patterned GaAs(001) substrates , 1995 .

[15]  S. Tsukamoto,et al.  GaAs quantum dots with lateral dimension of 25 nm fabricated by selective metalorganic chemical vapor deposition growth , 1994 .

[16]  F. K. Reinhart,et al.  Quadratic electro‐optic light modulation in a GaAs/AlGaAs multiquantum well heterostructure near the excitonic gap , 1986 .

[17]  A. Madhukar,et al.  Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100) , 1990 .

[18]  Takagahara.  Excitonic optical nonlinearity and exciton dynamics in semiconductor quantum dots. , 1987, Physical review. B, Condensed matter.

[19]  S. Denbaars,et al.  Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces , 1993 .

[20]  K. G. Ravikumar,et al.  Analysis of electric field effect in quantum box structure and its application to low-loss intersectional type optical switch , 1991 .

[21]  C. A. Burrus,et al.  Electro‐optic phase modulation in GaAs/AlGaAs quantum well waveguides , 1988 .

[22]  Masahiro Asada,et al.  Threshold current density of GaInAsP/InP quantum-box lasers , 1989 .

[23]  Shigehisa Arai,et al.  Operational wavelength range of GaInAs(P)-InP intersectional optical switches using field-induced electrooptic effect in low-dimensional quantum-well structures , 1992 .

[24]  Xiangkun Zhang,et al.  Tunneling injection lasers: a new class of lasers with reduced hot carrier effects , 1996 .

[25]  Nikolai N. Ledentsov,et al.  InAs–GaAs Quantum Pyramid Lasers: In Situ Growth, Radiative Lifetimes and Polarization Properties , 1996 .

[26]  Jasprit Singh,et al.  SMALL-SIGNAL MODULATION AND DIFFERENTIAL GAIN OF SINGLE-MODE SELF-ORGANIZED IN0.4GA0.6AS/GAAS QUANTUM DOT LASERS , 1997 .

[27]  L. Goldstein,et al.  Growth by molecular beam epitaxy and characterization of InAs/GaAs strained‐layer superlattices , 1985 .

[28]  Mark J. Bloemer,et al.  Electro-optic properties near the absorption edge of GaAs/AlGaAs multiple-quantum-well waveguides , 1993 .

[29]  M. Umeno,et al.  AlGaAs/GaAs light-emitting diode on a Si substrate with a self-formed GaAs islands active region grown by droplet epitaxy , 1996 .

[30]  Pallab Bhattacharya,et al.  Role of strain and growth conditions on the growth front profile of InxGa1−xAs on GaAs during the pseudomorphic growth regime , 1988 .