Increasing single mode power of 1.3-μm VCSELs by output coupling optimization.

We report on the single mode emission power enhancement of 1.3-μm VCSELs by adjusting the reflectivity of the top GaAs-based DBR for output coupling optimization using selective removal of Bragg reflector layers. Devices with record single mode power of 6.8-mW at room temperature and 2.8-mW at 80°C, with more than 30 dB single mode suppression ratio, have been obtained.

[1]  A. Syrbu,et al.  1.5-mW single-mode operation of wafer-fused 1550-nm VCSELs , 2004, IEEE Photonics Technology Letters.

[2]  P. Westbergh,et al.  Impact of Photon Lifetime on High-Speed VCSEL Performance , 2011, IEEE Journal of Selected Topics in Quantum Electronics.

[3]  M. Amann,et al.  Record Single-Mode, High-Power VCSELs by Inhibition of Spatial Hole Burning , 2013, IEEE Journal of Selected Topics in Quantum Electronics.

[4]  Bertrand Parvitte,et al.  Diode laser spectroscopy of H2O in the 7165– range for atmospheric applications , 2002 .

[5]  A. Mereuta,et al.  Transverse mode discrimination in long-wavelength wafer-fused vertical-cavity surface-emitting lasers by intra-cavity patterning. , 2013, Optics express.

[6]  Alain Valentin,et al.  Diode-Laser Spectroscopy: Line Profiles of H2O in the Region of 1.39 μm , 2001 .

[7]  C. Lauer,et al.  InP-based VCSEL technology covering the wavelength range from 1.3 to 2.0 μm , 2003 .

[8]  J. Gustavsson,et al.  Single fundamental-mode output power exceeding 6 mW from VCSELs with a shallow surface relief , 2004, IEEE Photonics Technology Letters.

[9]  A. Scherer,et al.  Vertical-cavity surface-emitting lasers: Design, growth, fabrication, characterization , 1991 .

[10]  A. Syrbu,et al.  High-performance single-mode VCSELs in the 1310-nm waveband , 2005, IEEE Photonics Technology Letters.

[11]  Alexei Sirbu,et al.  Wafer-fused heterostructures: application to vertical cavity surface-emitting lasers emitting in the 1310 nm band , 2011 .

[12]  Peter Werle,et al.  A review of recent advances in semiconductor laser based gas monitors , 1998 .

[13]  A. Syrbu,et al.  Cavity Mode—Gain Peak Tradeoff for 1320-nm Wafer-Fused VCSELs With 3-mW Single-Mode Emission Power and 10-Gb/s Modulation Speed Up to 70 $^{\circ}$C , 2007, IEEE Photonics Technology Letters.

[14]  E. Kapon,et al.  8 mW fundamental mode output of wafer-fused VCSELs emitting in the 1550-nm band , 2009, 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum electronics and Laser Science Conference.

[15]  R. Iga,et al.  Single transverse mode operation of 1.55-μm buried heterostructure vertical-cavity surface-emitting lasers , 2002, IEEE Photonics Technology Letters.

[16]  Fumio Koyama,et al.  Recent advances in VCSEL photonics , 2006, 16th Opto-Electronics and Communications Conference.