Low Bandgap GaInAsSbP Pentanary Thermophotovoltaic cells

The liquid phase epitaxial growth of pentanary GaInAsSbP lattice matched onto GaSb and InAs substrates is reported for use in narrow band gap thermophotovoltaic cells. The epitaxial layers were characterized and exhibited intense photoluminescence up to room temperature. Prototype thermophotovoltaic pi-n diodes were fabricated which were sensitive in the mid-infrared spectral range having cut-off wavelengths in the range 4.0 4.5 μm at room temperature.