The microstructural dependence of the opto-electronic properties of nitrogenated hydrogenated amorphous carbon thin films

[1]  G. Amaratunga,et al.  Nitrogen modification of hydrogenated amorphous carbon films , 1997 .

[2]  Gehan A. J. Amaratunga,et al.  Nitrogen containing hydrogenated amorphous carbon for thin‐film field emission cathodes , 1996 .

[3]  J. Jaskie Diamond-Based Field-Emission Displays , 1996 .

[4]  R. Egerton,et al.  Electron Energy-Loss Spectroscopy in the Electron Microscope , 1995, Springer US.

[5]  G. Amaratunga,et al.  Use of space-charge-limited current to evaluate the electronic density of states in diamond-like carbon thin films , 1994 .

[6]  Rusli,et al.  Optical quantum size effects in diamond-like carbon superlattice structures , 1994 .

[7]  John Martin Shannon,et al.  Current induced drift mechanism in amorphous SiNx:H thin film diodes , 1994 .

[8]  M. Tamor,et al.  Raman ``fingerprinting'' of amorphous carbon films , 1994 .

[9]  P. Koidl,et al.  Plasma Deposition, Properties and Structure of Amorphous Hydrogenated Carbon Films , 1991 .

[10]  David B. Bogy,et al.  Characterization of diamondlike carbon films and their application as overcoats on thin‐film media for magnetic recording , 1987 .

[11]  S. Aisenberg,et al.  Ion‐Beam Deposition of Thin Films of Diamondlike Carbon , 1971 .

[12]  J. Frenkel,et al.  On Pre-Breakdown Phenomena in Insulators and Electronic Semi-Conductors , 1938 .

[13]  Etienne Goovaerts,et al.  Electron trapping in PbCl_{2}:Tl crystals: the heteronuclear (PbTl)^{2+} center , 1998 .

[14]  S. M. Sze,et al.  Physics of semiconductor devices , 1969 .