Crosstalk Characterization of Single-photon Avalanche Diode (SPAD) Arrays in CMOS 150 nm Technology☆

Abstract In this paper, crosstalk characterization results of single-photon avalanche diode (SPAD) arrays in CMOS 150 nm technology are reported and discussed. SPADs are implemented in two different sizes (15.6 and 25.6 μm pitch) and three guard ring widths (0.6, 1.1 and1.6 μm). A SPAD array is composed of 25 (5×5) devices, which can be separately activated. Measurement results show that total crosstalk probability is well below 1% for arrays with conservative guard ring SPADs, and decreases with distance between devices. We also observed crosstalk is dependent on geometry parameters of SPADs.

[1]  Edoardo Charbon,et al.  A 160×128 single-photon image sensor with on-pixel 55ps 10b time-to-digital converter , 2011, 2011 IEEE International Solid-State Circuits Conference.

[2]  Antonino Ingargiola,et al.  Optical crosstalk in single photon avalanche diode arrays: a new complete model. , 2008, Optics express.

[3]  David Stoppa,et al.  Low-noise single Photon Avalanche Diodes in 0.15 μm CMOS technology , 2011, 2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

[4]  L. Cosentino,et al.  Features of Silicon Photo Multipliers: Precision Measurements of Noise, Cross-Talk, Afterpulsing, Detection Efficiency , 2009, IEEE Transactions on Nuclear Science.

[5]  Matteo Perenzoni,et al.  An 8×16-pixel 92kSPAD time-resolved sensor with on-pixel 64ps 12b TDC and 100MS/s real-time energy histogramming in 0.13µm CIS technology for PET/MRI applications , 2013, 2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers.

[6]  Alberto Gola,et al.  SiPM cross-talk amplification due to scintillator crystal: Effects on timing performance , 2012, 2012 IEEE Nuclear Science Symposium and Medical Imaging Conference Record (NSS/MIC).