Temperature dependence on current-voltage characteristics of Ni∕Au–Al0.45Ga0.55N Schottky photodiode

Temperature dependence on electrical characteristics of a Ni∕Au–Al0.45Ga0.55N Schottky photodiode is investigated in a temperature range of 198–323K. The ideality factor decreases from 2.57 to 1.75, while the barrier height increases from 0.75to1.14eV in this temperature range. The ln(I)-V curves at a small forward current are intersectant at 273, 298, and 323K and are almost parallel at 198, 223, and 248K. This crossing of the ln(I)-V curves is an inherent property of Schottky diodes, and the almost parallel curves can be well explained by thermionic field emission theory.

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