Defect reduction in GaAs epitaxial layers using a GaAsP‐InGaAs strained‐layer superlattice

GaAsP‐InGaAs strained‐layer superlattices grown lattice matched to GaAs have been used to reduce the density of threading dislocations originating from the GaAs substrate. GaAs epitaxial layers grown on the GaAsP‐InGaAs superlattice buffer layers showed a dislocation density lower by at least an order of magnitude than that obtained from epitaxial layers grown directly on GaAs substrates. Transmission electron microscopy showed that dislocations originating from the GaAs substrate do not penetrate the GaAsP‐InGaAs superlattice layers.

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