InGaAs/GaAs strained quantum-well lasers

The fabrication and performance characteristics of InGaAs/GaAs strained quantum well lasers are described. Lasers with low threshold current, high output power and excellent reliability have been fabricated. In0.2Ga0.8As/GaAs lasers emitting near 1 micrometers are useful as pump sources for erbium doped optical fiber amplifiers.