论文信息 - Annealing behavior of a proton irradiated Al{sub x}Ga{sub 1{minus}x}N/GaN high electron mobility transistor grown by MBE

Annealing behavior of a proton irradiated Al{sub x}Ga{sub 1{minus}x}N/GaN high electron mobility transistor grown by MBE

The influence of proton irradiation (1.8 MeV, 1 x 10{sup 14}cm{sup {minus}2}) on the properties of an Al{sub x}Ga{sub 1{minus}x}N/GaN high electron mobility transistor (HEMT) is studied from current-voltage (I-V) and Raman scattering measurements as a function of rapid thermal annealing (RTA) temperature after irradiation. The I-V curves show that the saturation current (I{sub ds}) and the transconductance (g{sub m}) of the HEMT were seriously reduced by the irradiation. However, the dc characteristics of the HEMT could be mostly recovered by RTA at over 800 C.

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