Modelling of single- and dual-gate MESFET mixers

Computer modelling allowing the determination of matching circuitry and optimum bias conditions for maximum conversion gain and IF bandwidth of FET mixers is described. Theoretical results for single-gate and dual-gate FET mixers are presented. Good agreement with measurements on a 12 GHz DBS reception dual-gate FET mixer (8 dB conversion gain with 800 MHz bandwidth) is demonstrated.