A DC to 22GHz, 2W high power distributed amplifier using stacked FET topology with gate periphery tapering

This paper describes a high power (2W) distributed amplifier (DA) MMIC. DA MMIC was fabricated using an Lg=0.25μm GaAs PHEMT process. DA MMIC contains an impedance transformer and heavily tapered gate periphery design for constant output power performance over 0.1 to 22GHz operational frequency. To obtain high voltage operation, the DA MMIC employed a three stacked FET topology. A 7-section DA demonstrated 2 W saturated output power and 12 dB small signal gain from 0.1 GHz to 22 GHz with peak output power of 3.5 W with power added efficiency (PAE) of 27%. Those test results exceeded recently reported GaN based power DA performance [4] with large margins.

[1]  Kohei Fujii.  Low cost Ka-band 7W GaAs PHEMT based HPA with GaN PHEMT equivalent performance , 2015, 2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC).

[2]  L. Kehias,et al.  Wideband, High-Efficiency GaN Power Amplifiers Utilizing a Non-Uniform Distributed Topology , 2007, 2007 IEEE/MTT-S International Microwave Symposium.

[3]  A. K. Ezzeddine,et al.  The high voltage/high power FET (HiVP) , 2003, IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2003.

[4]  Kevin W. Kobayashi,et al.  Multi-decade GaN HEMT Cascode-distributed power amplifier with baseband performance , 2009, 2009 IEEE Radio Frequency Integrated Circuits Symposium.

[5]  B. Stengel,et al.  Distributed Amplifier with Narrowband Amplifier Efficiency , 2007, 2007 IEEE/MTT-S International Microwave Symposium.

[6]  Inder Bahl,et al.  Fundamentals of RF and Microwave Transistor Amplifiers , 2009 .

[7]  Jihoon Kim,et al.  A 60 GHz Broadband Stacked FET Power Amplifier Using 130 nm Metamorphic HEMTs , 2011, IEEE Microwave and Wireless Components Letters.

[8]  M. Lajugie,et al.  New design method of uniform and nonuniform distributed power amplifiers , 2001 .