论文信息 - Intrinsic Curie temperature bistability in ferromagnetic semiconductor resonant tunneling diodes

Intrinsic Curie temperature bistability in ferromagnetic semiconductor resonant tunneling diodes

Received 4 May 2005; revised manuscript received 28 November 2005; published 13 January 2006We predict bistability in the Curie temperature-voltage characteristic of double barrier resonant-tunnelingstructures with dilute ferromagnetic semiconductor quantum wells. Our conclusions are based on simulationsof electrostatics and ballistic quantum transport combined with a mean-ﬁeld theory description of ferromag-netism in dilute magnetic semiconductors.DOI: 10.1103/PhysRevB.73.033310 PACS number s : 85.75.Mm, 72.25.Dc, 73.23.Ad

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