论文信息 - Heteroepitaxial Growth of High Quality GaAs Films on Rapid-Thermal-anealing Processed CaF 2 /Si(511) Structures

Heteroepitaxial Growth of High Quality GaAs Films on Rapid-Thermal-anealing Processed CaF 2 /Si(511) Structures

Heteroepitaxial growth of CaF 2 films on (511)Si and GaAs films on CaF 2 /Si(511) structures is investigated. CaF 2 films and GaAs films are grown by vacuum evaporation and molecular beam epitaxy, respectively. Ion channeling measurements and replica transmission electron microscopy show that CaF 2 films having good crystalline quality and surface steps can be formed by annealing at 900°C for 30 sec after the growth at 550° C. GaAs films having smooth surfaces and good crystalline quality can be grown on the annealed CaF 2 /Si(511) structures.

H. Ishiwara | S. Furukawa | T. Asano

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