论文信息 - AlGaN/GaN HEMTs grown on SiC substrates

AlGaN/GaN HEMTs grown on SiC substrates

The fabrication and characterisation of AlGaN/GaN HEMTs grown on SiC substrates are described. These devices have a transconductance of 70 mS/mm and a gate breakdown voltage in excess of 100V. The HEMTs have a hard pinch-off with nearly ideal subthreshold characteristics. An f/sub T/ of 6 GHz and an f/sub max/ of 11 GHz were measured for 1 /spl mu/m gate length devices.

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