Study of the effects of discharge conditions and substrate temperature on Si epitaxial deposition using sputtering-type electron cyclotron resonance plasma

It was found that epitaxial Si films could be deposited on Si substrates by using a sputtering-type electron cyclotron resonance plasma that had a conventional base pressure of 5×10−7 Torr. The effects of discharge conditions and substrate temperature were studied systematically in order to understand the necessary conditions for epitaxial growth. It was found that discharge gas pressure, target power for sputtering, and substrate temperature play crucial roles in the epitaxial deposition. The implications of the changes of the three parameters are discussed in detail.

[1]  H. Nakashima,et al.  Growth of Epitaxial Silicon Film at Low Temperature by Using Sputtering-Type Electron Cyclotron Resonance Plasma , 1999 .

[2]  K. Uchino,et al.  A study of ion velocity distribution functions in processing plasmas produced by electron cyclotron resonance discharges , 1997 .

[3]  T. Ohmi,et al.  Ion energy, ion flux, and ion mass effects on low‐temperature silicon epitaxy using low‐energy ion bombardment process , 1996 .

[4]  T. Yew,et al.  Silicon epitaxial growth at 300 °C by plasma enhanced chemical vapor deposition from SiH4/H2 , 1993 .

[5]  H. Nishimura,et al.  Processing Uniformity Improvement by Magnetic Field Distribution Control in Electron Cyclotron Resonance Plasma Chamber , 1993 .

[6]  V. Randle,et al.  Microtexture determination by electron back-scatter diffraction , 1992 .

[7]  T. Takahagi,et al.  Epitaxial growth of silicon at low temperature by ultrahigh vacuum electron cyclotron resonance plasma chemical vapor deposition , 1988 .

[8]  R. Reif,et al.  An optimized in situ argon sputter cleaning process for device quality low‐temperature (T≤800 °C) epitaxial silicon: Bipolar transistor and pn junction characterization , 1987 .

[9]  Cardona,et al.  Temperature dependence of the dielectric function and interband critical points in silicon. , 1987, Physical review. B, Condensed matter.

[10]  Bernard S. Meyerson,et al.  Nonequilibrium boron doping effects in low‐temperature epitaxial silicon films , 1987 .

[11]  F. Meyer,et al.  Growth of silicon homoepitaxial thin films by ultrahigh vacuum ion beam sputter deposition , 1986 .

[12]  Yasuhiro Shiraki,et al.  Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBE , 1986 .

[13]  T. Itoh,et al.  Heavily Arsenic‐Doped Silicon Epitaxial Films Grown by Partially Ionized MBE , 1986 .

[14]  P. Zalm,et al.  Ion beam epitaxy of silicon on Ge and Si at temperatures of 400 K , 1982 .

[15]  T. Itoh,et al.  Low Temperature Silicon Epitaxy by Partially Ionized Vapor Deposition , 1977 .