Photoacoustic and photothermal deflection spectroscopy of semiconductors

Photothermal techniques have been widely used for the determination of light absorption spectra of semiconductors, the main reason being the possibility of successfully measuring the weak absorption in the subgap region. The authors present and discuss the most relevant applications, particularly in the field of thin films of amorphous semiconductors. >

[1]  G. Amato,et al.  A deconvolution procedure for photothermal and photoconductive spectra of amorphous silicon films , 1992 .

[2]  G. Amato,et al.  Photothermal subgap spectra of doped silicon wafers , 1991 .

[3]  F. Demichelis,et al.  Influence of substrate temperature and annealing treatments on the properties of glow-discharge and sputtered a-SixC1−x : H films , 1991 .

[4]  G. Amato,et al.  Influence of substrate in photothermal measurements of thin film absorption , 1991 .

[5]  F. Demichelis,et al.  Electron spin resonance and photoacoustic spectroscopy of a-CSi:H and a-SiGe:H alloys , 1990 .

[6]  F. Demichelis,et al.  Urbach tail and gap state distribution in as-deposited and annealed a-(C-Si-Ge):H alloys , 1989 .

[7]  K. Pierz,et al.  Gap-state distribution in n-type and p-type a-Si:H from optical absorption , 1987 .

[8]  S. Yamasaki Optical absorption edge of hydrogenated amorphous silicon studied by photoacoustic spectroscopy , 1987 .

[9]  G. Rousset,et al.  Separation of surface and volume absorption in photothermal spectroscopy , 1986 .

[10]  A. Boccara,et al.  Photothermal deflection spectroscopy and detection. , 1981, Applied optics.

[11]  Ishiguro Takehiko,et al.  Photoacoustic Spectra of Semiconductors in the Strong Absorption Region , 1981 .

[12]  G. Amato A New Approach for Characterizing Surface Interface and Bulk Defects in a-Si:H , 1991 .

[13]  W. Paul,et al.  Comments on the Determination of Defect Density in a-Si:H Alloys by Integrating the Sub-Bandgap Optical Absorption Coefficient , 1991 .

[14]  S. Wagner,et al.  The Distribution of Occupied Deep Levels in a-Si:H Determined from CPM Spectra , 1991 .

[15]  G. Amato,et al.  Photothermal Investigation of Surfaces and Interfaces in Amorphous Silicon Films , 1990 .

[16]  M. Favre,et al.  SURFACE AND BULK STATES DETERMINED BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY , 1989 .

[17]  Siu,et al.  Combined photoacoustic and photoconductive spectroscopic investigation of nonradiative recombination and electronic transport phenomena in crystalline n-type CdS. II. Theory. , 1986, Physical review. B, Condensed matter.

[18]  N. Amer,et al.  Chapter 3 Optical Properties of Defect States in a-Si: H , 1984 .