III–V Metal–Oxide–Semiconductor Field-Effect Transistors with High κ Dielectrics

Research efforts on achieving low interfacial density of states (Dit) as well as low electrical leakage currents on GaAs-based III–V compound semiconductors are reviewed. Emphasis is placed on ultra high vacuum (UHV) deposited Ga2O3(Gd2O3) and atomic layer deposition (ALD)-Al2O3 on GaAs and InGaAs. Ga2O3(Gd2O3), the novel oxide, which was electron-beam evaporated from a gallium-gadolinium-garnet target, has, for the first time, unpinned the Fermi level of the oxide/GaAs heterostructures. Interfacial chemical properties and band parameters of valence band offsets and conduction band offsets in the oxides/III–V heterostructures are studied and determined using X-ray photoelectron spectroscopy and electrical leakage transport measurements. The mechanism of III–V surface passivation is discussed. The mechanism of Fermi-level unpinning in ALD-Al2O3ex-situ deposited on InGaAs were studied and unveiled. Systematic heat treatments under various gases and temperatures were studied to achieve low leakage currents of 10-8–10-9 A/cm2 and low Dit's in the range of (4–9)×1010 cm-2 eV-1 for Ga2O3(Gd2O3) on InGaAs. By removing moisture from the oxide, thermodynamic stability of the Ga2O3(Gd2O3)/GaAs heterostructures was achieved with high temperature annealing, which is needed for fabricating inversion-channel metal–oxide–semiconductor filed-effect transistors (MOSFET's). The oxide remains amorphous and the interface remains intact with atomic smoothness and sharpness. Device performances of inversion-channel and depletion-mode III–V MOSFET's are reviewed, again with emphasis on the devices using Ga2O3(Gd2O3) as the gate dielectric.

[1]  J. Kwo,et al.  Structural properties of Ga2O3(Gd2O3)–GaAs interfaces , 1998 .

[2]  Yeong-Her Wang,et al.  GaAs MOSFETs fabrication with a selective liquid phase oxidized gate , 2001 .

[3]  D. Muller,et al.  Advances in high κ gate dielectrics for Si and III-V semiconductors , 2003 .

[4]  A. Stesmans,et al.  Electron energy barriers at interfaces of GaAs(100) with LaAlO3 and Gd2O3 , 2006 .

[5]  Peide D. Ye,et al.  GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition , 2003 .

[6]  D. Murphy,et al.  Passivation of GaAs using (Ga2O3)1−x(Gd2O3)x, 0⩽x⩽1.0 films , 1999 .

[7]  Y. J. Lee,et al.  Surface passivation of III-V compound semiconductors using atomic-layer-deposition grown Al2O3 , 2005 .

[8]  Hong,et al.  Epitaxial cubic gadolinium oxide as a dielectric for gallium arsenide passivation , 1999, Science.

[9]  P. Fay,et al.  Microwave performance of GaAs MOSFET with wet thermally oxidized InAlP gate dielectric , 2006, IEEE Electron Device Letters.

[10]  High-quality nanothickness single-crystal Sc2O3 film grown on Si(111) , 2005 .

[11]  M. Passlack,et al.  Role of Ga2O3 template thickness and gadolinium mole fraction in GdxGa0.4−xO0.6/Ga2O3 gate dielectric stacks on GaAs , 2003 .

[12]  J. Kwo,et al.  Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition , 2004 .

[13]  Albert G. Baca,et al.  Effect of temperature on Ga2O3(Gd2O3)/GaN metal–oxide–semiconductor field-effect transistors , 1998 .

[14]  Peide D. Ye,et al.  Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga2O3(Gd2O3) as gate dielectric , 2003 .

[15]  Yuan Lu,et al.  Measurement of the valence-band offset at the epitaxial MgO-GaAs(001) heterojunction by x-ray photoelectron spectroscopy , 2006 .

[16]  R. Opila,et al.  Thermodynamic and photochemical stability of low interface state density Ga2O3–GaAs structures fabricated by in situ molecular beam epitaxy , 1996 .

[17]  J. Curless,et al.  Band alignment at epitaxial SrTiO3–GaAs(001) heterojunction , 2005 .

[18]  H.S. Tsai,et al.  Demonstration of submicron depletion-mode GaAs MOSFETs with negligible drain current drift and hysteresis , 1999, IEEE Electron Device Letters.

[19]  J. Kwo,et al.  Novel Ga2O3 (Ga2O3) passivation techniques to produce low Dit oxide-GaAs interfaces , 1997 .

[20]  J. A. del Alamo,et al.  An insulator-lined silicon substrate-via technology with high aspect ratio , 2001 .

[21]  N. Yokoyama,et al.  Planar GaAs MOSFET integrated logic , 1980, IEEE Transactions on Electron Devices.

[22]  Tzu-Ying Lin,et al.  Energy-band parameters of atomic-layer-deposition Al2O3/InGaAs heterostructure , 2006 .

[23]  J. Kwo,et al.  Initial growth of Ga2O3(Gd2O3) on GaAs: Key to the attainment of a low interfacial density of states , 2000 .

[24]  K. Yamaguchi,et al.  Theoretical characterization and high-speed performance evaluation of GaAs IGFET's , 1981, IEEE Transactions on Electron Devices.

[25]  J. Leem,et al.  Fabrication of a depletion mode GaAs MOSFET using Al2O3 as a gate insulator through the selective wet oxidation of AlAs , 2000 .

[26]  Hyung‐Ho Park,et al.  Energy band structure and electrical properties of (La2O3)1−x(SiO2)x(0⩽x⩽1)∕n-GaAs(001) system , 2005 .

[27]  M. Passlack,et al.  Optical and electrical properties of amorphous GdxGa0.4−xO0.6 films in GdxGa0.4−xO0.6/Ga2O3 gate dielectric stacks on GaAs , 2004 .

[28]  P. Ye,et al.  Capacitance-voltage studies on enhancement-mode InGaAs metal-oxide-semiconductor field-effect transistor using atomic-layer-deposited Al2O3 gate dielectric , 2006 .

[29]  J. Kwo,et al.  Advances in GaAs Mosfet's Using Ga 2 O 3 (Gd 2 O 3 ) as Gate Oxide , 1999 .

[30]  J. Kwo,et al.  Demonstration of enhancement-mode p- and n-channel GaAs MOSFETS with Ga2O3(Gd2O3) As gate oxide , 1997 .

[31]  J. Kwo,et al.  Ga 2 O 3 (Gd 2 O 3 )/InGaAs enhancement-mode n-channel MOSFETs , 1998 .

[32]  Y. J. Lee,et al.  Fundamental Study and Oxide Reliability of the MBE-Grown Ga 2−x Gd x O 3 Dielectric Oxide for Compound Semiconductor MOSFETs , 2004 .

[33]  M. Yakimov,et al.  Metal-oxide-semiconductor capacitors on GaAs with high-k gate oxide and amorphous silicon interface passivation layer , 2006 .

[34]  J. Kwo,et al.  Low interface state density oxide‐GaAs structures fabricated by in situ molecular beam epitaxy , 1996 .

[35]  W. S. Hobson,et al.  Depletion mode GaAs metal–oxide–semiconductor field effect transistors with Ga2O3(Gd2O3) as the gate oxide , 1998 .

[36]  Y. J. Lee,et al.  Thermodynamic stability of Ga2O3(Gd2O3)∕GaAs interface , 2005 .

[37]  Depletion-mode GaAs-based MOSFET with Ga2O3(Gd2O3) as a gate dielectric , 2007 .

[38]  James S. Harris,et al.  InGaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectric grown by atomic-layer deposition , 2006 .

[39]  M. Walther,et al.  Planar GaAs MOSFET using wet thermally oxidised AlGaAs as gate insulator , 2000 .

[40]  Y. J. Lee,et al.  Structural and electrical characteristics of Ga2O3(Gd2O3)∕GaAs under high temperature annealing , 2006 .

[41]  J. Kwo,et al.  Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/)/GaAs power MOSFETs , 1999 .

[42]  W. Mönch.  On the band structure lineup at interfaces of SiO2, Si3N4, and high-κ dielectrics , 2005 .

[43]  J. Kwo,et al.  Energy-band parameters at the GaAs– and GaN–Ga2O3(Gd2O3) interfaces , 2001 .

[44]  J. J. Wang,et al.  Formation and characterization of nanometer scale metal-oxide-semiconductor structures on GaAs using low-temperature atomic layer deposition , 2005 .

[45]  Hyung‐Ho Park,et al.  Controlled band offset in (Gd2O3)1−x(SiO2)x(0⩽x⩽1)∕n–GaAs (001) structure , 2005 .

[46]  John Robertson,et al.  Band offsets of high K gate oxides on III-V semiconductors , 2006 .