Role of p-doping profile and regrowth on the static characteristics of 1.3-/spl mu/m MQW InGaAsP-InP lasers: experiment and modeling

In this paper, we study both experimentally and theoretically how the change of the p-doping profile, particularly the p-i junction placement, affects the output characteristics of 1.3-/spl mu/m InGaAsP-InP multiple-quantum-well (MQW) lasers. The relationship between the p-doping profile before and after regrowth is established, and the subsequent impact of changes in the p-i junction placement on the device output characteristics, is demonstrated. Device characteristics are simulated including carrier transport, capture of carriers into the quantum wells, the quantum mechanical calculation of the properties of the wells, and the solution for the optical mode and its population self-consistently as a function of diode bias. The simulations predict and the experiments confirm that an optimum p-i junction placement simultaneously maximizes external efficiency and minimizes threshold current. Tuning of the base epitaxial growth Zn profile allows one to fabricate MQW devices with a threshold current of approximately 80 A/cm/sup 2/ per well for devices with nine QW's at room temperature or lasers with a characteristic temperature T/sub 0/=70 K within the temperature range of 20/spl deg/C-80/spl deg/C.

[1]  S. Luryi,et al.  Effect of p-doping profile on performance of strained multi-quantum-well InGaAsP-InP lasers , 1996 .

[2]  Kouji Nakahara,et al.  1.3-/spl mu/m InGaAsP-InP n-type modulation-doped strained multiquantum-well lasers , 1997 .

[3]  G. Shtengel,et al.  Internal optical loss measurements in 1.3 μm InGaAsP lasers , 1995 .

[4]  S. Luryi,et al.  Temperature performance of 1.3-μm InGaAsP-InP lasers with different profile of p-doping , 1997, IEEE Photonics Technology Letters.

[5]  Chin B. Su,et al.  Effect of doping level on the gain constant and modulation bandwidth of InGaAsP semiconductor lasers , 1984 .

[6]  C. L. Reynolds,et al.  Zn diffusion behavior in InGaAsP/InP capped mesa buried heterostructures , 1995 .

[7]  Serge Luryi,et al.  Direct measurement of the carrier leakage out of the active region in InGaAsP/InP laser heterostructures , 1995 .

[8]  U. Koren,et al.  Direct measurement of the carrier leakage in an InGaAsP/InP laser , 1983 .

[9]  T. Tanbun-Ek,et al.  Gain characteristics of 1.55-μm high-speed multiple-quantum-well lasers , 1995, IEEE Photonics Technology Letters.

[10]  S. Luryi,et al.  Optimization of p-doping profile of 1.3-/spl mu/m InGaAsP/InP MQW lasers for high-temperature operation , 1998, Technical Digest. Summaries of Papers Presented at the Conference on Lasers and Electro-Optics. Conference Edition. 1998 Technical Digest Series, Vol.6 (IEEE Cat. No.98CH36178).

[11]  K. Uomi,et al.  Doping-type dependence of turn-on delay time in 1.3-μm InGaAsP-InP modulation-doped strained quantum-well lasers , 1996, IEEE Photonics Technology Letters.

[12]  S. Downey,et al.  Evidence of very strong inter-epitaxial-layer diffusion in Zn-doped GaInPAs/InP structures , 1995 .

[13]  M. Hybertsen,et al.  Comprehensive simulation of quantum well lasers , 1998, Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors.

[14]  C. L. Reynolds,et al.  Effect of Zn on the electro-optical characteristics of metalorganic chemical vapour deposition grown 1.3 /spl mu/m InGaAsP/InP lasers , 1996 .

[15]  C. Henry,et al.  The effect of intervalence band absorption on the thermal behavior of InGaAsP lasers , 1983 .

[16]  Kiyoyuki Yokoyama,et al.  Electrostatic deformation in band profiles of InP‐based strained‐layer quantum‐well lasers , 1995 .

[17]  J. A. Long,et al.  Growth and characterization of high yield, reliable, high-power, high-speed, InP/InGaAsP capped mesa buried heterostructure distributed feedback (CMBH-DFB) lasers , 1989 .

[18]  P. A. Morton,et al.  Impedance‐corrected carrier lifetime measurements in semiconductor lasers , 1995 .

[19]  Mark S. Hybertsen,et al.  Role of nonequilibrium carrier distributions in multiple quantum well InGaAsP-based lasers , 1998, Photonics West.

[20]  M. R. Pinto,et al.  Carrier transport in laser heterostructures , 1994 .

[21]  M. R. Pinto,et al.  Simulation of semiconductor quantum well lasers , 1997, Photonics West.

[22]  Yuzo Yoshikuni,et al.  Theoretical study on enhanced differential gain and extremely reduced linewidth enhancement factor in quantum-well lasers , 1993 .