High‐irradiance degradation tests on concentrator GaAs solar cells
暂无分享,去创建一个
[1] B. Anspaugh,et al. Forward-biased current annealing of radiation degraded indium phosphide and gallium arsenide solar cells (for space power) , 1990, IEEE Conference on Photovoltaic Specialists.
[2] M. Gates,et al. Stability of GaAs/Ge solar cells with standard front contacts after long-term, high-temperature exposure , 1990, IEEE Conference on Photovoltaic Specialists.
[3] Eli Yablonovitch,et al. Effects of perimeter recombination on GaAs-based solar cells , 1990, IEEE Conference on Photovoltaic Specialists.
[4] Antonio Luque,et al. High efficiency and high concentration in photovoltaics , 1999 .
[5] Michael R. Melloch,et al. Surface and perimeter recombination in GaAs diodes: an experimental and theoretical investigation , 1991 .
[6] Carlos Algora,et al. A GaAs solar cell with an efficiency of 26.2% at 1000 suns and 25.0% at 2000 suns , 2001 .
[7] Frank Dimroth,et al. Metamorphic GayIn1−yP/Ga1−xInxAs tandem solar cells for space and for terrestrial concentrator applications at C > 1000 suns , 2001 .