论文信息 - The physics of heteroepitaxy of 3C-SiC on Si : role of Ge in the optimization of the 3C-SiC/Si heterointerface - 字舞流文

The physics of heteroepitaxy of 3C-SiC on Si : role of Ge in the optimization of the 3C-SiC/Si heterointerface

R. Berjoan | A. Dollet | C. Dupuy | P. Masri | J. Calas | M. Avérous | N. Moreaud | G. Chaix | M. Laridjani