High electron mobility in Ga(In)NAs films grown by molecular beam epitaxy

We report the highest mobility values above 2000 cm2/Vs in Si doped GaNAs film grown by molecular beam epitaxy. To understand the feature of the origin which limits the electron mobility in GaNAs, temperature dependences of mobility were measured for high mobility GaNAs and referential low mobility GaInNAs. Temperature dependent mobility for high mobility GaNAs is similar to the GaAs case, while that for low mobility GaInNAs shows large decrease in lower temperature region. The electron mobility of high quality GaNAs can be explained by intrinsic limiting factor of random alloy scattering and extrinsic factor of ionized impurity scattering.

[1]  Eicke R. Weber,et al.  Growth of 1.3 μm InGaAsN laser material on GaAs by molecular beam epitaxy , 1999 .

[2]  Masafumi Yamaguchi,et al.  Origin Investigation of a Nitrogen-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy , 2011 .

[3]  J. Chauveau,et al.  Annealing effects on the crystal structure of GaInNAs quantum wells with large In and N content grown by molecular beam epitaxy , 2003 .

[4]  John F. Klem,et al.  Minority carrier diffusion and defects in InGaAsN grown by molecular beam epitaxy , 2002 .

[5]  E. Haller,et al.  Band anticrossing in dilute nitrides , 2004 .

[6]  Eric Daniel Jones,et al.  InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs , 1999 .

[7]  Henning Riechert,et al.  Low threshold lasing operation of narrow stripe oxide-confined GaInNAs/GaAs multiquantum well lasers at 1.28 /spl mu/m , 2000 .

[8]  Y. Okada,et al.  Carrier mobility characteristics in GaInNAs dilute nitride films grown by atomic hydrogen-assisted molecular beam epitaxy , 2007 .

[9]  A. Uedono,et al.  Effect of growth temperature on the properties of Ga(In)NAs thin films by atomic hydrogen-assisted RF-MBE , 2007 .

[10]  Eoin P. O'Reilly,et al.  Intrinsic limits on electron mobility in dilute nitride semiconductors , 2003 .

[11]  J. Harris,et al.  Nitrogen-related electron traps in Ga(As, N) layers (≤3% N) , 2003 .

[12]  Daniel J. Friedman,et al.  Breakeven criteria for the GaInNAs junction in GaInP/GaAs/GaInNAs/Ge four‐junction solar cells , 2002 .

[13]  Wolfgang Stolz,et al.  Doping behaviour of Si, Te, Zn and Mg in lattice-matched (GaIn)(NAs)/GaAs bulk films , 2003 .

[14]  Shiyong Zhang,et al.  The role of Sb in the molecular beam epitaxy growth of 1.30–1.55 μm wavelength GaInNAs/GaAs quantum well with high indium content , 2006 .

[15]  Daniel J. Friedman,et al.  Photocurrent of 1 eV GaInNAs lattice-matched to GaAs , 1998 .

[16]  L. R. Weisberg.  Anomalous Mobility Effects in Some Semiconductors and Insulators , 1962 .

[17]  S. G. Spruytte,et al.  Electron traps in Ga(As,N) layers grown by molecular-beam epitaxy , 2002 .

[18]  R. Kudrawiec,et al.  Recent Progress on 1.55- $\mu{\hbox {m}}$ Dilute-Nitride Lasers , 2007, IEEE Journal of Quantum Electronics.

[19]  Fumitaro Ishikawa,et al.  Localized and delocalized states in GaNAs studied by microphotoluminescence and photoreflectance , 2009 .

[20]  E. Pavelescu,et al.  Photoluminescence and structural properties of GaInNAs/GaAs quantum wells grown by molecular beam epitaxy under different arsenic pressures , 2006 .