论文信息 - High‐power and high‐speed 1.3 μm V‐grooved inner‐stripe lasers with new semi‐insulating current confinement structures on p‐InP substrates

High‐power and high‐speed 1.3 μm V‐grooved inner‐stripe lasers with new semi‐insulating current confinement structures on p‐InP substrates

A significant improvement in the maximum output power of a 1.3 μm GaInAsP/InP laser with a semi‐insulating current confinement structure is reported. The improvement has been achieved by interposing an n‐type InP layer between a p‐InP substrate and an Fe‐doped InP layer. A maximum cw output power of 180 mW and a modulation bandwidth of 8.5 GHz have been obtained.

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