Metal—organic chemical vapor deposition of copper using hydrated copper formate as a new precursor

Abstract Copper films were obtained by metal-organic chemical vapour deposition using hydrated copper formate. The films were deposited on Si(100) and sputtered TiN Si(100) 4-in wafers, at substrate temperatures of about 300 °C, with a reducing or inert carrier gas. Results from X-ray diffraction and X-ray photoelectron spectroscopy indicated a pure, crystalline and oxygen-free copper. Different film morphologies were observed by scanning electron microscopy: both continuous films and inhomogeneous films with copper crystallites monodirectionally oriented were observed. In situ mass-spectroscopy analysis allows the proposal of some reaction mechanisms and highlights the importance of the initial hydration level of the precursor on the nucleation rate.

[1]  Susan L. Cohen,et al.  Mechanisms of copper chemical vapor deposition , 1992 .

[2]  F. Körösy,et al.  Volatile Cuprous and Silver Salts of Fatty Acids , 1948, Nature.

[3]  B. Calpini,et al.  Selective low pressure chemical vapor deposition of copper: effect of added water vapor in hydrogen or helium carrier gas , 1992 .

[4]  J. Albella,et al.  Metallization technologies for ULSI , 1989 .

[5]  S. Babu,et al.  Laser induced deposition of copper and lead powders , 1992 .

[6]  Do‐Heyoung Kim,et al.  Film Growth Kinetics of Chemical Vapor Deposition of Copper from Cu ( HFA ) 2 , 1993 .

[7]  J. Hsieh.  Influence of surface‐activated reaction kinetics on low‐pressure chemical vapor deposition conformality over micro features , 1993 .

[8]  R. Sievers,et al.  Vapor Deposition of Metals by Hydrogen Reduction of Metal Chelates , 1965 .

[9]  R. Marsh,et al.  Chemical vapor deposition of copper from Cu+1 precursors in the presence of water vapor , 1993 .

[10]  A. Gupta,et al.  Laser writing of copper lines from metalorganic films , 1987 .

[11]  Alain E. Kaloyeros,et al.  Chemical Vapor Deposition of Copper for Multilevel Metallization , 1993 .

[12]  H. Bergh,et al.  Selective copper film growth on platinum clusters , 1989 .

[13]  S. Motojima,et al.  Low Temperature Deposition of Metal Nitrides by Thermal Decomposition of Organometallic Compounds , 1975 .

[14]  Phillip J. Brock,et al.  Chemical vapor deposition of copper from 1,5‐cyclooctadiene copper(I) hexafluoroacetylacetonate , 1991 .

[15]  Do‐Heyoung Kim,et al.  Selective deposition of copper by chemical vapor deposition using Cu(HFA)2 , 1994 .

[16]  Mark J. Hampden-Smith,et al.  Chemical Vapor Deposition of Copper from Hexafluoroacetylacetonato Copper(I) Vinyltrimethylsilane Deposition Rates, Mechanism, Selectivity, Morphology, and Resistivity as a Function of Temperature and Pressure , 1993 .

[17]  Vincent M. Donnelly,et al.  Decomposition of hexafluoroacetylacetonate Cu(I) vinyltrimethylsilane on, and diffusion of Cu into single crystal and polycrystalline titanium nitride , 1993 .

[18]  R. Gutmann,et al.  Advanced multilayer metallization schemes with copper as interconnection metal , 1993 .

[19]  B. Calpini,et al.  Copper Film Growth by Chemical Vapor Deposition Electrical and Optical Measurements in Real Time, and Studies of Morphology , 1993 .

[20]  Susan L. Cohen,et al.  Selectivity in copper chemical vapor deposition , 1992 .

[21]  Carl E. Larson,et al.  Chemical Vapor Deposited Copper from Alkyne Stabilized Copper (I) Hexafluoroacetylacetonate Complexes , 1993 .